Memory cell operation

ABSTRACT

Methods, devices, and systems associated with memory cell operation are described. One or more methods of operating a memory cell include charging a capacitor coupled to the memory cell to a particular voltage level and programming the memory cell from a first state to a second state by controlling discharge of the capacitor through a resistive switching element of the memory cell.

PRIORITY INFORMATION

This application is a continuation of U.S. application Ser. No.13/117,889, filed May 27, 2011, which is incorporated by reference.

TECHNICAL FIELD

The present disclosure relates generally to semiconductor memory devicesand methods, and more particularly, to memory cell operation.

BACKGROUND

Memory devices are typically provided as internal, semiconductor,integrated circuits in computers or other electronic devices. There aremany different types of memory, including random access memory (RAM),read only memory (ROM), dynamic random access memory (DRAM), synchronousdynamic random access memory (SDRAM), flash memory, and resistive (e.g.,resistance variable) memory, among others. Types of resistive memoryinclude programmable conductor memory, phase change random access memory(PCRAM), conductive bridging random access memory (CBRAM), and resistiverandom access memory (RRAM), among others.

Memory devices are utilized as non-volatile memory for a wide range ofelectronic applications in need of high memory densities, highreliability, and low power consumption. Non-volatile memory may be usedin, for example, personal computers, portable memory sticks, solid statedrives (SSDs), digital cameras, cellular telephones, portable musicplayers such as MP3 players, movie players, and other electronicdevices.

Memory devices may include a number of memory cells arranged in a matrix(e.g., array). For example, an access device, such as a diode, a fieldeffect transistor (FET), or bipolar junction transistor (BJT), for amemory cell may be coupled to an access line (e.g., a word line) forminga “row” of the array. Each memory cell may be coupled to a data/senseline (e.g., a bit line) in a “column” of the array.

Resistive Memory devices include resistive memory cells that store databased on the resistance level of a resistive switching element. Thecells can be programmed to a desired state (e.g., resistance level), forexample, by applying sources of energy, such as positive or negativeelectrical pulses (e.g., current pulses) to the cells for a particularduration. Resistance states may be programmed in accordance with alinear distribution, or a non-linear distribution. As an example, asingle level cell (SLC) may represent one of two data states (e.g.,logic 1 or 0), which can depend on whether the cell is programmed to aresistance above or below a particular level. Various resistive memorycells can be programmed to multiple different resistance levelscorresponding to multiple data states. Such cells may be referred to asmulti state cells, multi digit cells, and/or multi level cells (MLCs)and can represent multiple binary digits (e.g., 10, 01, 00, 11, 111,101, 100, 1010, 1111, 0101, 0001, etc.).

The programmed state of a selected resistive memory cell may bedetermined (e.g., read), for example, by sensing current through thecell responsive to an applied voltage. The sensed current, which variesbased on the resistance level of the memory cell, indicates theprogrammed state of the cell.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates an example of a portion of a memory array associatedwith operating memory cells in accordance with one or more embodimentsof the present disclosure.

FIG. 2 is a diagram illustrating ON resistance versus programmingcurrent associated with operating memory cells in accordance with one ormore embodiments of the present disclosure.

FIG. 3 illustrates a block diagram of a device for operating memorycells in accordance with one or more embodiments of the presentdisclosure.

FIG. 4 illustrates an example of a circuit timing diagram associatedwith operating a memory cell in accordance with one or more embodimentsof the present disclosure.

FIG. 5 is a timing diagram illustrating current through a memory elementfor a number of different bit line bias voltages in accordance with oneor more embodiments of the present disclosure.

FIG. 6 illustrates a memory device for operating memory cells inaccordance with one or more embodiments of the present disclosure.

DETAILED DESCRIPTION

Methods, devices, and systems associated with memory cell operation aredescribed herein. One or more methods of operating a memory cell includecharging a capacitor coupled to the memory cell to a particular voltagelevel and programming the memory cell from a first state to a secondstate by controlling discharge of the capacitor through a resistiveswitching element of the memory cell.

Embodiments of the present disclosure can provide benefits such asgreater control of the amount of charge through a memory cell (e.g.,resistive memory cell), among other benefits. In one or moreembodiments, a parasitic capacitance associated with the memory cell canbe charged to a known, finite charge, which can then be dischargedthrough the memory cell in a controlled manner. In one or moreembodiments, a capacitor external to the array of resistive memory cellscan be used to program the memory cells to multiple resistance levels.

Controlling the amount of charge (e.g., current) through resistivememory cells via embodiments described herein can be used to control thetransition of resistive switching elements from a first state (e.g., ahigh resistance state (HRS), which may be referred to as an “OFF”state), to a second state (e.g., a low resistance state (LRS), which maybe referred to as an “ON” state). As used herein, the terms “low” and“high” are used to denote the relative resistance level associated withparticular states and does not imply particular resistance values.Programming resistive memory cells in accordance with embodimentsdescribed herein can increase the ability to accurately control theprogrammed resistance of the cells and can provide for MLC programmingcapability of the cells, among other benefits.

In the following detailed description of the present disclosure,reference is made to the accompanying drawings that for a part hereof,and in which is shown by way of illustration how one or more embodimentsof the disclosure may be practiced. These embodiments are described insufficient detail to enable those of ordinary skill in the art topractice the embodiments of this disclosure, and it is to be understoodthat other embodiments may be utilized and that process, electrical,and/or structural changes may be made without departing from the scopeof the present disclosure.

The figures herein follow a numbering convention in which the firstdigit corresponds to the drawing figure number and the remaining digitsidentify an element or component in the drawing. Similar elements orcomponents between different figures may be identified by the use ofsimilar digits. For example, 115 may reference element “15” in FIG. 1,and a similar element may be referenced as 215 in FIG. 2. Also, as usedherein, “a number of a particular element and/or feature can refer toone or more of such elements and/or features.

As will be appreciated, elements shown in the various embodiments hereincan be added, exchanged, and/or eliminated so as to provide a number ofadditional embodiments of the present disclosure. In addition, theproportion and the relative scale of the elements provided in thefigures are intended to illustrate various embodiments of the presentinvention and are not to be used in a limiting sense.

FIG. 1 illustrates an example of a portion of a memory array 100 inaccordance with one or more embodiments of the present disclosure. Inthe example illustrated in FIG. 1, the array 100 is a cross point array100 including a first number of conductive lines 105-0, 105-1, . . . ,105-N and a second number of conductive lines 110-0, 110-1, . . . ,110-M. The conductive lines 105-0, 105-1, . . . 105-N can be accesslines, which may be referred to herein as world lines. The conductivelines 110-0, 110-1, . . . , 110-M can be data/sense lines, which may bereferred to herein as bit lines. As illustrated, the word lines 105-0,105-1, . . . , 105-N are substantially parallel to each other and aresubstantially orthogonal to the bit lines 110-0, 110-1, . . . , 110-M,which are substantially parallel to each other; however, embodiments arenot so limited.

A memory cell 115 is located at each of the intersections of the wordlines 105-0, 105-1, . . . , 105-N and bit lines 110-0, 110-1, . . . ,110-M. The memory cells 115 can be resistive memory cells operated inaccordance with embodiments described herein. Although embodiments arenot so limited, the memory cells 115 can function in a two-terminalarchitecture (e.g., with a particular word line 105-0, 105-1, . . . ,105-N and bit line 110-0, 110-1, . . . , 110-M serving as a bottom andtop electrode).

The memory cells 115 can be RRAM cells, CBRAM cells, and/or PCRAM cells,among other types of resistive memory cells. In various embodiments, thememory cells 115 can have a “stack” structure that includes a selectdevice (e.g., an access device such as a diode) coupled to a storageelement (e.g., resistive switching element). A resistive switchingelement can include a programmable portion of the memory cell 115 (e.g.,the portion programmable to a number of different resistance levelscorresponding to different data states). The resistive switching effectsassociated with the memory cells 115 can include, but are not limitedto, nanomechanical memory effect, molecular switching effects,electrostatic/electronic effects, electrochemical metallization effect,valency change memory effect, thermochemical memory effect, phase changememory effect, magnetoresistive memory resistive effect, andferroelectric tunneling, among others. A resistive switching element caninclude, for instance, one or more resistance variable materials such asa transition metal oxide material, a perovskite, a chalcogenide, or anelectrolyte between an anode and cathode, among others. Embodiments arenot limited to a particular resistive variable material or materialsassociated with the resistive switching elements of the memory cells115. Other examples of resistive variable materials that can be used toform resistive switching elements include binary metal oxide materials,colossal magnetoresistive materials, and/or various polymer basedresistive variable materials, among others.

The memory cells 115 of array 100 can be operated by applying a voltage(e.g., a write voltage) across the memory cells 115 to program thememory cells 115 to a desired state via selected word lines 105-0,105-1, . . . , 105-N and bit lines 110-0, 110-1, . . . , 110-M. Thewidth and/or magnitude of the voltage pulses across the memory cells 115can be adjusted (e.g., varied) in order to program the memory cells 115to particular data states (e.g., by adjusting a resistance level of theresistive switching element). Although not illustrated in FIG. 1, thearray 100 can be coupled to control circuitry configured to perform oneor more embodiments described herein. For instance, the controlcircuitry can be configured to control programming circuitry in order toprogram memory cells to desired states by applying appropriate operatingvoltages to word lines and bit lines associated with the array 100. Asan example, in various embodiments, control circuitry can be configuredto control charging of one or more capacitors coupled to a memory celland discharging the one or more capacitors through a resistive switchingelement of the memory cell in order to program the memory cell inaccordance with embodiments described herein.

In resistive memory cells such as Conductive Bridging (CB) orProgrammable Metallization Cells (PMC), the switching operation canoccur over short time periods (e.g., a few nanoseconds or less). As anexample, the transition from an OFF state can occur particularly rapidlyas Joule heating and increased electric fields accelerate thetransition, which can make it difficult to accurately controlprogramming of the cell to a desired state. Stray capacitance associatedwith the memory cell (e.g., word line to word line, word line to bitline, and/or bit line to bit line stray capacitance) can increase thedifficulty associated with accurately programming the memory cell. Forinstance, the stray capacitance acts as an energy storage device and asthe memory cell transitions (e.g., from an OFF state to an ON state),the stored energy (e.g., charge) discharges through the resistiveswitching element of the cell, which can present further difficultieswith controlling the charge (e.g., current) through the cell.Controlling the programming current through a resistive memory cell canbe important in order to tune the ON resistance via programming currentvariation (e.g., as discussed herein in connection with FIG. 2).

In some instances, a current mirror positioned at the edge of an arrayof resistive memory cells can be used to control the current through aselected cell (e.g., through the resistive switching element of the cellbeing programmed). However, in such instances, the current mirror is notable to control stray capacitance within the array (e.g., straycapacitance between the current mirror and the target cell). As such, acurrent mirror may not be an effective solution for accuratelycontrolling current through a memory cell since stray capacitance alsodischarges through the cell during programming. In one or moreembodiments of the present disclosure, stray capacitance associated withan array of memory cells can be charged to a predetermined voltage andused to accurately control programming current through a selected memorycell.

FIG. 2 is a diagram illustrating ON resistance versus programmingcurrent associated with operating memory cells in accordance with one ormore embodiments of the present disclosure. Plot 260 indicates thatprogramming current through a resistive memory cell is directly relatedto the ON resistance level of the cell. The effects of stray capacitancecan be dampened by increasing the program current to achieve a desired,known ON resistance level. However, the energy required to go back to anOFF state is prohibitively high. Embodiments described herein providegreater control of the program current, which implies greater controlover the ON resistance level. For instance, a lower program current canbe used to achieve a desired, known ON resistance level, which requiresless energy to go back to an OFF state. Further, greater control of theprogram current enables MLC operation within a smaller range of energylevels.

FIG. 3 illustrates a block diagram of a device 320 for operating memorycells in accordance with one or more embodiments of the presentdisclosure. In this example, the device 320 includes a resistive memorycell 315 coupled between an access line, for example, a word line 305and a data/sense line, for example, a bit line 310 and a resistiveswitching element 317 within the resistive memory cell 315. Theresistive memory cell 315 can be a memory cell such as cell 115described in FIG. 1.

The device 320 includes a voltage source 321 configured to bias wordline 305 coupled to a resistive memory cell 315 during operations suchas programming, erasing, and reading operations. As such, the voltagesource 321 may be referred to herein as a word line bias or as a wordline driver. The device 320 also includes a voltage source 329configured to bias bit line 310 during operation of the memory cell 315.As such, the voltage source 329 may be referred to herein as a bit linebias or as a bit line driver.

In various embodiments, a memory cell (e.g., 315) can be programmed froma first state (e.g., an OFF state) to a second state (e.g., an ON state)by controlling discharge of a capacitor through a resistive switchingelement (e.g., 317) of the memory cell. The memory cell 315 can beoperated as an SLC or an MLC. For instance, in one or more embodiments,the memory cell can be an MLC programmed from an OFF state to one of atleast two different ON states.

Block 325 of device 320 represents a capacitor that can be charged to aparticular voltage level via word line bias 321. In the embodimentillustrated in FIG. 3, the capacitor 325 represents a stray capacitanceassociated with the word line 305. That is, the capacitor 325 includes aparasitic capacitance between the word line 305 and other word lineswithin the memory array (e.g., word line to word line parasiticcapacitance). The capacitor 325 can also include parasitic capacitancebetween the word line 305 and various bit lines (e.g., bit line 310 andother bit lines) within the array (e.g., word line to bit line parasiticcapacitance). As such, the capacitor 325 may be referred to as a wordline parasitic capacitor. The capacitance of the capacitor 325 can bedetermined based on various characteristics of the array such as typesof conductive materials used and the types of dielectric materialbetween the conductors, physical dimensions of the word lines and bitlines, and/or spacing of the word lines and bit lines, among othercharacteristics. Also, the value of the stray capacitance associatedwith capacitor 325 can be adjusted by controlling characteristics suchas cell pitch, interlayer dielectric (ILD) permittivity, and/or blocksize, among other characteristics. In one or more embodiments, thecapacitor 325 can have a capacitance of about 100 fF to 300 fF; however,embodiments are not limited to a particular capacitance associated withcapacitor 325. Since the capacitance associated with capacitor 325 canbe determined (e.g., a known value), the capacitor 325 can be charged toa known amount of charge.

Block 327 of device 320 represents a capacitor coupled to voltage source329. In the embodiment illustrated in FIG. 3, the capacitor 327represents a stray capacitance associated with the bit line 310. Thatis, the capacitor 327 includes a parasitic capacitance between the bitline 310 and other bit lines within the memory array (e.g., bit line tobit line parasitic capacitance). As such, the capacitor 327 may bereferred to as a bit line parasitic capacitor.

The device 320 includes a switch 323 that can be closed to apply theword line bias 321 to word line 305 and opened to remove the word linebias 321 from the word line 305 (e.g., in association with a programmingoperation performed on a selected cell 315). In an example programmingoperation, the switch 323 is closed such that the word line parasiticcapacitor 325 is charged to a particular voltage level (e.g., about 1V).Initially, the bit line bias 329 is configured such that no potentialdifference exists across the resistive switching element 317 duringcharging of the capacitor 325. After the capacitor 325 is charged, theword line bias is adjusted (e.g., removed by opening switch 323) and thebit line bias 329 is adjusted (e.g., reduced) to provide a potentialdifference across the resistive switching element 317. Due to thepotential difference across the resistive switching element 317, thecapacitor 327 charges as the capacitor 325 discharges through theresistive switching element 317. As described further below inconnection with FIGS. 4 and 5, the magnitude of the current associatedwith the discharge of the capacitor 325 through the resistive switchingelement 317 can be controlled by controlling the bit line bias 329applied to bit line 310. As noted above, controlling the magnitude ofthe current through the resistive switching element 317 can control theresistance level of the cell 315, which can provide benefits such asenabling MLC capability, among other benefits.

In the example programming operation described above, cell 315represents a selected memory cell (e.g., a cell selected forprogramming) As such word line 305 represents a selected word line(e.g., a word line coupled to a selected cell) and bit line 310represents a selected bit line (e.g., a bit line coupled to a selectedcell). As such, the stray capacitance 325 can represent parasiticcapacitance between the selected word line 305 and adjacent word lines(e.g., unselected word lines). During a programming operation, theunselected word lines can be tied to ground (e.g., relative to theselected word line). However, embodiments are not so limited. Forinstance, unselected word lines can be tied to other suitable potentialsduring a programming operation. Since the stray capacitance 325represents parasitic capacitance between a selected word line (e.g.,305) and unselected and word lines, the bias applied to the unselectedword lines during a programming operation can affect the amount ofcharge stored by capacitor 325.

Embodiments of the present disclosure are not limited to the exampleillustrated in FIG. 3. Also, although not shown in FIG. 3, in one ormore embodiments, the resistive switching device 317 can be coupled to aselect device (e.g., a select transistor), which can be used to decreasecurrent leakage associated with the memory cell 315.

FIG. 4 illustrates an example of a circuit timing diagram 430 associatedwith operating a memory cell in accordance with one or more embodimentsof the present disclosure. The diagram 430 plots time in nanoseconds(ns) on the x-axis, voltage in volts (V) on the left y-axis, and currentin microamps (μA), on the right y-axis. Timing diagram 430 includes anumber of signals (e.g., current and voltage signals) associated withthe memory device 320 illustrated in FIG. 3 during a programmingoperation in accordance with one or more embodiments of the presentdisclosure. Voltage signal 431 represents the bias voltage applied tothe word line 305 of the selected cell 315 via voltage source 321 ascontrolled by switch 323. Voltage signal 433 represents the voltageassociated with the word line parasitic capacitor 325. Voltage signal435 represents the voltage applied to the bit line 310 of the selectedcell 315 via voltage source 329. Current signal 437 represents thecurrent through the resistive switching element 317 of the selected cell315 during the programming operation.

As illustrated in diagram 430, at the onset of the programming operation(e.g., at 0 ns), the switch 323 is closed such that a word line bias ofabout 1V is applied to the word line 305 via the voltage source 321 (asindicated by voltage signal 431). As such, and as indicated by voltagesignal 433, the word line parasitic capacitance 325 is charged to aparticular voltage (e.g., about 0.9V in this example) corresponding to aparticular amount of accumulated charge. In various embodiments, theaccumulated charge associated with the parasitic capacitance 325 can bedischarged through the resistive element 317 by adjusting the biasapplied to the word line 305 and the bias applied to the bit line 310 ofthe selected memory cell 315 in order to program the memory cell 315 toa particular state (e.g., from an OFF state to one of a number of ONstates).

For instance, in the example illustrated in FIG. 4, after the word lineparasitic capacitance 325 has been charged to the particular voltage,the switch 323 is opened such that the voltage source 321 isdisconnected (e.g., voltage source 321 no longer applies a voltage tothe word line 305). As illustrated in diagram 430, the switch 323 isopened at about 9 ns (as indicated by voltage signal 431), at whichpoint the bias applied to the bit line 310 is adjusted to about −1.5V.The voltage difference across the resistive switching element 317 causesthe charge accumulated on the parasitic capacitor 325 to dischargethrough the resistive switching element 317. The current signal 437indicates the current through the resistive switching element 317 as thecapacitor 325 discharges (as indicated by voltage signal 433).

In the example illustrated in FIG. 4, the magnitude of the currentthrough the resistive switching element 317 is about 22 microamps whenthe potential across the element 317 is adjusted (e.g., by removingapplication of the word line bias via switch 323 and reducing the bitline bias). As discussed in connection with FIG. 2 and as discussedfurther below in connection with FIG. 5, the magnitude of theprogramming current through the resistive switching element 317 candirectly affect the resultant resistance state of the memory cell 315.Varying the voltage applied to the bit line 310 during a programmingoperation can vary the magnitude of the current through the resistiveswitching element 317. As such, the bit line bias voltage can beadjusted to control the resistance state (e.g., the particular ONresistance state) of the memory cell 315. Consequently, a selectedmemory cell can be programmed from a first state (e.g., an OFF state) toa desired second state (e.g., an ON state) with greater control, ascompared to previous approaches.

Embodiments are not limited to the example bias conditions illustratedin FIG. 4. For instance, in the example illustrated in FIG. 4, theselected cell 315 is shielded from prematurely switching by biasing theselected bit line 310 at 0V. The bit line bias is then pulled to −1.5Vto promote discharge from capacitor 325 through the cell 315. In anumber of embodiments, other biasing conditions can be used to preventthe cell 315 from switching states prematurely (e.g., prior to thecapacitance 325 being charged to a desired level). For instance, in anumber of embodiments, the selected bit line 310 can be floated (e.g.,by placing a high impedance between the bit line 310 and the bit linebias 329) while the parasitic capacitance 325 is charging. As anotherexample, the bit line can be biased at a potential equal to about halfof the word line bias potential during charging of the parasiticcapacitance 325.

FIG. 5 is a timing diagram 540 illustrating current through a resistivememory element for a number of different bit line bias voltages inaccordance with one or more embodiments of the present disclosure. Thediagram 430 plots time in nanoseconds (ns) on the x-axis and current inmicroamps (μA) on the y-axis. Timing diagram 540 includes a number ofcurrent signals 541, 543, and 545 associated with operating (e.g.,programming) a resistive memory cell in accordance with one or moreembodiments of the present disclosure.

In the example illustrated in FIG. 5, each of the current signals 541,543, and 545 correspond to a different bias voltage applied to a bitline coupled to a selected memory cell being programmed (e.g., from anOFF state to an ON state). Applying different bias voltages to the bitline of a selected cell (e.g., 315) varies the potential differenceacross the resistive switching element (e.g., 317) and leads todifferent current magnitudes through the resistive switching element.Since the programming current magnitude directly affects the resultantresistance state of the cell, controlling the programming currentmagnitude (e.g., via controlling the bit line bias voltage) can be usedto achieve a desired resistance state of the memory cell.

In this example, current signal 541 can be analogous to current signal437 shown in FIG. 4. As such, the current signal 541 corresponds to anapplied bit line bias voltage of about −1.5V. Current signal 543 cancorrespond to an applied bit line bias voltage of about −1.0V, andcurrent signal 545 can correspond to an applied bit line bias voltage ofabout −0.5V. As will be appreciated, an increased potential differenceacross the resistive switching element (e.g., the voltage differencebetween the voltage of the charged capacitor 325 and the bit line biasvoltage) results in an increased programming current magnitude throughthe resistive switching element 317. As such, an increased bit line biasvoltage magnitude results in an increased programming current magnitudethrough the resistive switching element 317. For instance, in thisexample, the applied bias voltage of about −1.0V results in aprogramming current magnitude of about 17 microamps (as indicated bycurrent signal 543) and the applied bias voltage of about −0.5V resultsin a programming current magnitude of about 12 microamps (as indicatedby current signal 545). Each of the different resulting currentmagnitudes can correspond to a different program state (e.g., adifferent resistance level) of the memory cell 315. As such, byadjusting the bit line bias, the selected memory cell can be programmedto multiple states.

FIG. 6 illustrates a memory device 650 for operating (e.g., programming)memory cells in accordance with one or more embodiments of the presentdisclosure. Memory device 650 includes an array 600 of resistive memorycells. The array 600 can be a cross-point array such as array 100illustrated in FIG. 1.

The device 650 includes a current mirror 653 coupled to the array 600 Inthis example, the current mirror 653 is coupled to the array 600 via amultiplexer 651-0. A driver/sense amp 657 is coupled to the currentmirror 653. In one or more embodiments, the driver/sense amp 657 can beused to bias bit lines during memory operations and to sense the bitduring a memory operations. The current mirror 653 can be used toprovide operational compliance (e.g., to avoid over-programming) of aselected memory cell (e.g., 115, 315). For example, over programming canbe avoided by the current mirror 653 limiting current into the array600. Although the current mirror 653 is coupled to bit lines of thearray 600, embodiments are not so limited. For instance, a currentmirror can be coupled to word lines of the array 600. Since, in variousembodiments, a selected bit line may be biased at a potential closer toa ground than a potential to which a selected word line is biased,coupling the current mirror 653 to the bit lines may provide increasedcontrol as compared to control provided by a current mirror coupled tothe word lines.

The device 650 includes an external capacitor 655 coupled to the array600. In this example, the external capacitor 655 is coupled to the array600 via a multiplexer 651-1. In one or more embodiments, the multiplexer651-0 and/or 651-1 can act as tri-state devices. The device 650 includesa switch 659 coupled between the external capacitor 655 and a driver 661(e.g., a word line driver). In one or more embodiments, the driver 661can charge the external capacitor 655 in association with a programmingoperation performed on a selected memory cell of array 600. In variousembodiments, the external capacitor 655 is charged concurrently with aword line parasitic capacitance associated with the selected cell (e.g.,parasitic capacitance 325 shown in FIG. 3). Charging of the externalcapacitor 655 and the word line parasitic capacitance can be performedwhile preventing the selected memory cell from switching. Methods ofpreventing the selected memory cell from switching can include biasingthe selected bit line (e.g., 310) of the selected cell at zero voltsduring charging of the capacitor 655 and tri-stating the selected bitline (e.g., such that the selected bit line “floats”) during charging ofthe capacitor 655, among others.

The external capacitor 655 and parasitic capacitance can be charged to aparticular (e.g., known) amount of charge. The known amount of chargeassociated with the combined external capacitor and parasiticcapacitance can then be discharged through the selected memory cell toprogram the selected cell in accordance with embodiments describedherein. In various embodiments, while the external capacitor 655discharges through the selected cell, it is disconnected (e.g.,isolated) from the driver 661 to prevent undesired application of biasthereto during the programming operation. The external capacitor can bedisconnected from the driver 661 via a switch 659 (e.g., as shown inFIG. 6) or other suitable means. For example, a current mirror can beused to isolate the external capacitor 655 from the driver 661.

Although specific examples have been illustrated and described herein,those of ordinary skill in the art will appreciate that an arrangementcalculated to achieve the same results can be substituted for thespecific examples shown. This disclosure is intended to coveradaptations or variations of one or more examples of the presentdisclosure. It is to be understood that the above description has beenmade in an illustrative fashion, and not a restrictive one. Combinationof the above examples, and other examples not specifically describedherein will be apparent to those of skill in the art upon reviewing theabove description. The scope of the one or more examples of the presentdisclosure includes other applications in which the above structures andmethods are used. Therefore, the scope of one or more examples of thepresent disclosure should be determined with reference to the appendedclaims, along with the full range of equivalents to which such claimsare entitled.

Throughout the specification and claims, the meanings identified belowdo not necessarily limit the terms, but merely provide illustrativeexamples for the terms. The meaning of “a,” “an,” and “the” includesplural reference, and the meaning of “in” includes “in” and “on.” Theterm “a number of is meant to be understood as including at least onebut not limited to one. The phrase “in an example” and “in anembodiment,” as used herein does not necessarily refer to the sameexample/embodiment, although it can.

In the foregoing Detailed Description, various features are groupedtogether in a single example for the purpose of streamlining thedisclosure. This method of disclosure is not to be interpreted asreflecting an intention that the disclosed examples of the presentdisclosure have to use more features than are expressly recited in eachclaim. Rather, as the following claims reflect, inventive subject matterlies in less than all features of a single disclosed example. Thus, thefollowing claims are hereby incorporated into the Detailed Description,with each claim standing on its own as a separate example.

1-19. (canceled)
 20. A method for operating a memory cell, comprising:charging a capacitor coupled to the memory cell to a particular voltagelevel; and discharging the capacitor through the memory cell to programthe memory cell, wherein the discharge of the capacitor provides amagnitude of current sufficient to program the memory cell from a firststate to a second state and the capacitor is a stray capacitance thatincludes a conductive line parasitic capacitance.
 21. The method ofclaim 20, wherein the conductive line parasitic capacitance includes acapacitance between a first access line and a second access line. 22.The method of claim 21, wherein the first access line and the secondaccess line are each word lines.
 23. The method of claim 22, wherein thefirst access line is selected for programming the memory cell and thesecond access line is unselected for programming the memory cell. 24.The method of claim 23, wherein the first access line is tied to aground relative the second access line.
 25. The method of claim 20,wherein the conductive line parasitic capacitance includes a capacitancebetween an access line and a data/sense line.
 26. The method of claim25, wherein the access line is a word line and the data/sense line is abit line.
 27. The method of claim 26, wherein the access line isselected for programming the memory cell.
 28. A memory device,comprising: an array of memory cells; control circuitry coupled to thearray to charge a capacitor coupled to a selected memory cell to aparticular voltage level and provide a magnitude of current, bydischarge of the capacitor, to the selected memory cell sufficient toprogram the selected memory cell from a first state to a second state;and a switch located between a voltage source and the selected memorycell, wherein opening the switch adjusts a bias applied to an accessline corresponding to the selected memory cell.
 29. The memory device ofclaim 28, wherein the array of memory cells includes a plurality ofsingle level memory cells.
 30. The memory device of claim 28, whereinthe array of memory cells includes a plurality of multiple level memorycells.
 31. The memory device of claim 28, wherein the capacitor has acapacitance of about 100 femtofarads to about 300 femtofarads.
 32. Thememory device of claim 28, wherein, including a select device coupled toa storage element of the selected memory cell.
 33. The memory device ofclaim 28, wherein the array of memory cells includes a plurality ofconductive bridging cells.
 34. The memory device of claim 29, whereinthe array of memory cells includes a plurality of programmablemetallization cells.
 35. A method of operating a memory cell,comprising: closing a switch that is coupled to the memory cell to applya bias to an access line coupled to the memory cell to charge an accessline parasitic capacitor; opening the switch to adjust the bias;discharging the access line parasitic capacitor through the memory cell,wherein the discharge provides a magnitude of current sufficient toprogram the memory cell from a first state to a second state; andcharging a bit line parasitic capacitor via the discharge of the accessline parasitic capacitor.
 36. The method of claim 36, includingproviding a potential difference across the memory cell by adjusting abit line bias.
 37. The method of claim 36, wherein adjusting a bit linebias includes reducing the bit line bias.
 38. The method of claim 35,including shielding the memory cell from prematurely programming fromthe first state to the second state by biasing a bit line.
 39. Themethod of claim 35, wherein opening the switch to adjust the biasincludes removing a voltage from the access line.